1N Unit. Peak Repetitive Reverse Voltage. Working Peak Reverse Voltage For packaging details, go to our website at 3. Qualified to AECQ10x, No. Automotive Compliant PPAP, No. Configuration, Single. Maximum Average Rectified Current IO, 3 A. @ Terminal Temperature TT, 1N – Low Drop Power Schottky Rectifier, 1N, 1NRL, AN Schottky diode avalanche performance in automotive applications, , KB.

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Product is in design feasibility stage. You will receive an email when your request is approved. Smart Home and City Smart Industry. Getting started with eDesignSuite. Schottky Barrier Rectifier, 3.

Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Shipped in plastic bags, 5, per bag. Schottky diode avalanche performance in automotive applications.

dipde The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. Please contact our sales support for information on specific devices. Any such audit shall not interfere with the ordinary business operations of Licensee and shall be conducted at the expense of ON Semiconductor.

STMicroelectronics 1N5822 Schottky Diode, 40V 3A, 2-Pin DO-201AD

Calculation of conduction losses in a power rectifier. Product is in volume production Evaluation: Within 30 days after the termination of the Agreement, Licensee shall furnish a statement certifying that all Content and related documentation have been destroyed or returned to ON Semiconductor.


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High power, efficiency and density.

It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free dikde diodes and polarity protection diodes. Not Recommended for New Design. Product is in volume production 0. This Agreement may not be amended except in writing signed by an authorized representative of each of the parties hereto.

Extremely Low v F.

1N5822: Schottky Barrier Rectifier, 3.0 A, 40 V

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1N Schottky Barrier Rectifier, A, 40 V

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